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Structure and phase constitution of graphite-loaded reaction-bonded sic

https://doi.org/10.22349/1994-6716-2022-111-3-49-58

Abstract

The influence of porous SiC preforms densities for the siliconizing process on the structure and phase constitution of graphite-loaded reaction-bonded SiC (G-SiSiC) was studied. It was found that varying the densities of porous SiC preforms containing artificial graphite of similar grain size with the dimensions less than 25 mm (in height or diameter) can lead to the G-SiSiC samples with low free Si content (less 4 wt.%.). It was also shown that reaction sintering of G-SiSiC samples with the optimized densities during the siliconizing process results in the formation of a dense fine-grained SiC layer. Moreover, during the siliconizing process, a dense SiC gradient matrix is formed in which graphite and Si inclusions are uniformly dispersed in bulk.

About the Authors

O. Yu. Sorokin
All-Russian Scientific Research Institute of Aviation Materials NRC “Kurchatov Institute”
Russian Federation

Cand Sc (Eng).

17 St Radio, 105005 Moscow.



I. O. Belyachenkov
All-Russian Scientific Research Institute of Aviation Materials NRC “Kurchatov Institute”
Russian Federation

17 St Radio, 105005 Moscow.



A. S. Chainikova
All-Russian Scientific Research Institute of Aviation Materials NRC “Kurchatov Institute”
Russian Federation

Cand Sc (Eng).

17 St Radio, 105005 Moscow.



S. V. Zhitnyuk
All-Russian Scientific Research Institute of Aviation Materials NRC “Kurchatov Institute”
Russian Federation

Cand Sc (Eng).

17 St Radio, 105005 Moscow.



P. N. Medvedev
All-Russian Scientific Research Institute of Aviation Materials NRC “Kurchatov Institute”
Russian Federation

Cand Sc (Phys-Math).

17 St Radio, 105005 Moscow.



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Review

For citations:


Sorokin O.Yu., Belyachenkov I.O., Chainikova A.S., Zhitnyuk S.V., Medvedev P.N. Structure and phase constitution of graphite-loaded reaction-bonded sic. Voprosy Materialovedeniya. 2022;(3(111)):49-58. (In Russ.) https://doi.org/10.22349/1994-6716-2022-111-3-49-58

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ISSN 1994-6716 (Print)